- 您现在的位置：买卖IC网 > Sheet目录460 > IXTA182N055T7 (IXYS)MOSFET N-CH 55V 182A TO-263-7
IXTA182N055T7
Symbol
Test Conditions
Characteristic Values
TO-263 (7-lead) (IXTA...7) Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V DS = 10 V; I D = 60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 10 V, V DS = 30 V, I D = 25 A
R G = 5 ? (External)
65
100
4850
954
212
36
35
53
38
114
S
pF
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
R thJC
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
30
32
nC
nC
0.42 ° C/W
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
T J = 25 ° C unless otherwise specified)
Min.
Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
70
182
490
1.0
A
A
V
ns
V R = 25 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTA182N055T
MOSFET N-CH 55V 182A TO-263
IXTA1R4N100P
MOSFET N-CH 1000V 1.4A TO-263
IXTA1R4N120P
MOSFET N-CH 1200V 1.4A TO-263
IXTA1R6N50D2
MOSFET N-CH 500V 1.6A D2PAK
IXTA200N055T2
MOSFET N-CH 55V 200A TO-263
IXTA200N075T7
MOSFET N-CH 75V 200A TO-263-7
IXTA200N075T
MOSFET N-CH 75V 200A TO-263
IXTA200N085T7
MOSFET N-CH 85V 200A TO-263-7
相关代理商/技术参数
IXTA18P10T
功能描述:MOSFET 18 Amps 100V 0.12 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA1N100
功能描述:MOSFET 1.5 Amps 1000V 11 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA1N100P
功能描述:MOSFET 1 Amps 1000V 14 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA1N100TRL
制造商:IXYS Integrated Circuits Division 功能描述:
IXTA1N120P
功能描述:MOSFET 1 Amps 1200V 20 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA1N80
功能描述:MOSFET 1 Amps 800V 11 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA1R4N100P
功能描述:MOSFET 1.4 Amps 1000V 11 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA1R4N100PTRL
制造商:IXYS Integrated Circuits Division 功能描述: